博士生导师

电话：020-39336570

招生方向

光学工程  0803 （硕士、博士）

微电子学与固体电子学 080903（硕士、博士）

研究组：

由心所至！

“III族氮化物光电材料与探测”研究组

教育经历

名古屋工业大学 工学硕士、博士

授课课程

本科课程：《微电子材料》、

硕士课程：《半导体外延技术》、《半导体光电探测技术》、《光学工程实验与方法》、《光学工程进展》

研究方向

宽禁带半导体材料与器件：

材料外延生长——

（1）高Al组分AlGaN外延生长机制、方法及特性研究

（2）InGaN外延生长机制、方法及特性研究

器件设计与制作——

（1）高灵敏AlGaN紫外光电探测的器件物理、模拟仿真、结构设计与工艺技术研究

（2）高量子效率InGaN可见光探测器的物理、仿真设计及工艺研究

科研项目

先后主持了国家自然基金面上项目、国家“863计划”创新课题、广东省节能减排重大科技专项课题、粤港投标项目、国家“973计划”课题、广东省可见光通信技术及标准光组件重大专项等项目。

在研项目：

2021 广州市重点领域研发计划“新材料”重大科技专项

2019 广东省“第三代半导体材料与器件”重大专项

2016 国家自然基金重点项目

2016“战略性先进电子材料”国家重点研发向项目

近期科研成果

Z Peng, S Yang, X Xie, M Wu, Z Lv, J Lu, and H Jiang, "Boosting AlGaN solar-blind ultraviolet phototransistor performance via Stoichiometry-Tailored In-Situ SiNx passivation", Appl. Surf. Sci. 703, 163416 (2025).

Zesheng Lv, Supeng Zhang, Gang Wang,  and Hao Jiang*, "Space and Time Domain Transport Modulation by InGaN/GaN Single-Carrier Superlattices for High-Performance UV-Blue Photodetection", ACS Photonics, 12(2), 776–785 (2025),

Zesheng Lv, Haoming Xu, Zhuoya Peng, Tianzhi Peng, Gang Wang, and Hao Jiang*, "Ultrasensitive self-filtering visible-light phototransistor using InGaN/GaN single-carrier superlattices and polarization depletion", Optics Express, 33(4), 7195 (2025).

Zesheng Lv, TianzhiPeng, GangWang, and Hao Jiang*, "Substantial improvement of InGaN/GaN visible-light polarization-induced self-depletion phototransistor by thermally oxidized Al2O3", Appl. Phys. Lett. 125, 191104 (2024).

Zhuoya Peng; Mian Wu; Zesheng Lv; Shouqiang Yang; Mengyao Song; Yv Yin, Hao Jiang, "Effective Mitigation of Persistent Photoconductivity in AlGaN Solar-Blind Field-Effect Phototransistors Via In-situ SiNx",IEEE Electron Device Letters, 45(11), 2074 - 2077 (2024).

Zesheng Lv, Supeng Zhang, Hao Jiang,"Superhigh Gain and High Speed InGaN/GaN Visible-light Photodetector using Polarization Heterointerface Barrier and Single-carrier Superlattices", Optics Express 32(12) 22045-22051 (2024).

Zesheng Lv, Quan Wen, Yezhang Fang, Zhuoya Peng, Hao Jiang,"Highly Sensitive Narrowband AlGaN Solar Blind  Ultraviolet Photodetectors Using Polarization Induced Heterojunction Barrier ",  IEEE Electron Device Letters, 45(4), 550 - 553 (2024).

Jiabing Lu and Hao Jiang*,"High-Temperature Operation of Al0.5Ga0.5N/AlN Solar-Blind Phototransistor With Built-In Polarization Photogate", IEEE Electron Device Letters, 44(9),1524-1527 (2023). DOI: 10.1109/LED.2023.3298359

Jiabing Lu, Zesheng Lv, and Hao Jiang*, "AlGaN solar-blind phototransistor capable of directly detecting sub-fW signals: self-depletion and photorecovery of full-channel 2DEG enabled by a quasi-pseudomorphic structure", Photonics Res. 11 (7), 1217 (2023).  //doi.org/10.1364/PRJ.489960

Zesheng Lv; Jiabing Lu; Haoming Xu; Tianzhi Peng; Quan wen; Gang Wang; Hao Jiang*, "High performance InGaN/GaN visible-light field effect phototransistor using polarization induced virtual photogate", Appl. Phys. Lett. 123, 051103 (2023) //doi.org/10.1063/5.0155109

Zesheng Lv, Yezhang Fang, Zhongkun Liao, Hailong Wang, Cairong Ding, Hao Jiang*, "Controlling metal adatoms on InGaN growing front for defect suppression and high-stability visible-light photodetection", J. Alloy. Comp. 942, 16899 (2023).  //doi.org/10.1016/j.jallcom.2023.168991

Quan Wen, Zesheng Lv, Shiquan Lai, Leyi Li, Hao Jiang*, "High performance foreign-dopant-free ZnO/AlxGa1−xN ultraviolet phototransistors using atomic-layer-deposited ZnO emitter layer", J. Alloy. Comp. 937, 168433 (2023). //doi.org/10.1016/j.jallcom.2022.168433

 Jiabing Lu, Zesheng Lv, Xinjia Qiu, Shiquan Lai, Hao Jiang, "Ultrasensitive and high-speed AlGaN/AlN solar-blind ultraviolet photodetector: a full-channel-self-depleted phototransistor by a virtual photogate", Photonics Res. 10 (9), 2229 (2022). DOI:10.1364/PRJ.467689

Quan Wen, Chupei Wang, Xinjia Qiu, Zesheng Lv, and Hao Jiang, "Significant performance improvement of AlGaN solar-blind heterojunction phototransistors by using Na2S solution based surface treatment", Appl. Surf. Sci. 591, 153144 (2022).  //doi.org/10.1016/j.apsusc.2022.153144

Kai Wang, Xinjia Qiu, Zhiyuan Song, Zesheng Lv, and Hao Jiang, "Ultrahigh detectivity, high-speed and low-dark current AlGaN solar-blind heterojunction field-effect phototransistors realized using dual-float-photogating effect", Photonics Res. 10, 111 (2022).  //doi.org/10.1364/PRJ.444444

Zesheng Lv , Yao Guo , Supeng Zhang , Quan Wen and Hao Jiang, "Polarization engineered InGaN/GaN Visible-light photodiodes featuring high responsivity, bandpass response, and high speed", J. Mater. Chem. C, 9, 12273 (2021). DOI: 10.1039/d1tc01193f

Zesheng Lv, Hailong Wang, and Hao Jiang*,“Surface Evolution of Thick InGaN Epilayers with Growth Interruption Time", J. Phys. Chem. C , 125, 16643-16651 (2021).  //doi.org/10.1021/acs.jpcc.0c11414

Zesheng Lv, Zhongkun Liao, Hao Jiang*,“InGaN/GaN Visible-light Heterojunction Phototransistor Featuring High responsivity, High speed, and Bias-controlled Wavelength-selectivity”, IEEE Electron Device Letters,  vol. 42, no. 9, pp. 1362-1365 (2021). Doi: 10.1109/LED.2021.3097048

Xinjia Qiu and Hao Jiang*, "Highly Conductive and 260 nm Transparent p‑Type Al0.6Ga0.4N Achieved Utilizing Interface Doping Effect”, Crystal Growth & Design, 21(4), 2389-2397 (2021).  //doi.org/10.1021/acs.cgd.1c00020

Quan Wen, Shaoji Tang, and Hao Jiang*,"Efficient surface passivation using two-step ammonium sulfide based treatment for GaN/AlGaN heterojunction phototransistors", J. Appl. Phys. 129, 045702 (2021).

Xinjia Qiu, Yingda Chen, Enze Han, Zesheng Lv, Zhiyuan Song and Hao Jiang*,"High doping efficiency in p-type Al-rich AlGaN by modifying the Mg doping planes", Materials Advances, 1(1), 77-85 (2020).

Lijie Sun , Zesheng Lv, Zhenhua Zhang, Xinjia Qiu, and Hao Jiang*, "High-Performance AlGaN Heterojunction Phototransistor With Dopant-Free Polarization-Doped P-base", IEEE Electron Device Letters, 41(3),325-328 (2020). Doi: 10.1109/LED.2020.2966917.

Xinjia Qiu, Zhiyuan Song, Lijie Sun,  Zhenhua Zhang, Zesheng Lv, Quan Wen, Hao Jiang*, "High‑gain AlGaN/GaN visible‑blind avalanche heterojunction phototransistors", J Mater Sci: Mater Electron 31, 652–657 (2020).